About SCIOCS

Company History

1971 Research and development were started for compound semiconductor materials in Hitachi Cable, Ltd.
1973 Mass production start of boat grown GaAs substrates for LDs
1981 LEC furnace Installation. Development start of LEC technology for GaAs single crystal growth
1986 MOVPE furnace installation. Development start of MOVPE technology for microwave devices
1989 Mass production start of MOVPE HEMT wafers for BS antenna
1994 Mass production start of MOVPE FET and HBT wafers for PA in cell phone
1995 Development start of HVPE technology for GaN single crystal growth
1999 Development start of GaN HEMT wafers for RF devices
Mass production start of InGaP HBT MOVPE wafers for PA in cell phone
Award of the 31st ICHIMURA Industrial Prize from the New Technology Development Foundation for development of GaAs substrates and epitaxial wafers
2000 Mass production start of AlGaAs MOVPE wafers for LD
Establishment of GaN substrate production process by Void Assisted Separation (VAS) method
2001 Mass production start of AlGaInP MOVPE wafers for LED and LD
2003 Mass production start of GaN substrates for LD
2005 Mass production start of MOVPE GaN-HEMT wafers for PA in cell phone base station
2007 Development start of KNN Lead-free piezoelectric thin films
2008 Development of high-efficiency HVPE growth equipment in-house and Mass production start of GaN substrate
2010 HVPE growth equipment in-house installation for development start of GaN templates
2011 Award of the 43rd ICHIMURA Industrial Prize from the New Technology Development Foundation for development of GaN substrates
2013 Hitachi Cable, Ltd. and Hitachi Metals, Ltd., to merge
2014 Succeeded in development of 3-axis angular rate sensor using KNN thin films
2015 Established SCIOCS
Richard M. Fulrath Award from The American Ceramic Society for development of KNN films
2016 Succeeded in development of AlN templates
2017 SCIOCS merger with Sumitomo Chemical's compound semiconductor materials business
About SCIOCS